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US07645617B2 Nonvolatile ferroelectric memory device using silicon substrate, method for manufacturing the same, and refresh method thereof 失效
使用硅衬底的非易失性铁电存储器件及其制造方法及其刷新方法

  • Patent Title: Nonvolatile ferroelectric memory device using silicon substrate, method for manufacturing the same, and refresh method thereof
  • Patent Title (中): 使用硅衬底的非易失性铁电存储器件及其制造方法及其刷新方法
  • Application No.: US11717735
    Application Date: 2007-03-14
  • Publication No.: US07645617B2
    Publication Date: 2010-01-12
  • Inventor: Hee Bok Kang
  • Applicant: Hee Bok Kang
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor, Inc.
  • Current Assignee: Hynix Semiconductor, Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Law Firm PLC
  • Priority: KR10-2006-0070964 20060727; KR10-2006-0132602 20061222
  • Main IPC: H01L21/8239
  • IPC: H01L21/8239
Nonvolatile ferroelectric memory device using silicon substrate, method for manufacturing the same, and refresh method thereof
Abstract:
A nonvolatile ferroelectric memory device using a silicon substrate includes an insulating layer formed in an etching region of the silicon substrate, a floating channel layer formed over the bottom word line, an impurity layer formed at both ends of the floating channel layer and including a source region formed over the insulating layer and a drain region formed over the silicon substrate, a ferroelectric layer formed over the floating channel layer, and a word line formed over the ferroelectric layer.
Abstract(Chinese):

使用硅衬底的非易失性铁电存储器件包括形成在硅衬底的蚀刻区域中的绝缘层，形成在底部字线上的浮动沟道层，形成在浮动沟道层两端的杂质层，并且包括源极 形成在绝缘层上的区域和形成在硅衬底上的漏极区域，形成在浮动沟道层上的铁电层以及形成在铁电层上的字线。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8239 ........存储器结构
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