Invention Grant
- Patent Title: Method of processing wafers with resonant heating
- Patent Title (中): 用共振加热处理晶片的方法
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Application No.: US10721657Application Date: 2003-11-25
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Publication No.: US07645356B2Publication Date: 2010-01-12
- Inventor: Siddhartha Panda , Richard S. Wise
- Applicant: Siddhartha Panda , Richard S. Wise
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Bond, Schoeneck & King, PLLC
- Agent George R. McGuire
- Main IPC: C23F1/00
- IPC: C23F1/00

Abstract:
A method of etching a wafer using resonant infrared energy and a filter to control non-uniformities during plasma etch processing. The filter includes a predetermined array or stacked arrangement of variable transmission regions that mirror the spatial etch distortions caused by the plasma etching process. By spatially attenuating the levels of IR energy that reach the wafer, the filter improves uniformity in the etching process. Filters may be designed to compensate for edge fast etching due to macro-loading, asymmetric pumping in a plasma chamber, and magnetic field cusping.
Public/Granted literature
- US20050112900A1 Method of processing wafers with resonant heating Public/Granted day:2005-05-26
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