Invention Grant
US07644389B2 Method for producing a mask for the lithographic projection of a pattern onto a substrate
失效
用于制造用于将图案的光刻投影到基板上的掩模的方法
- Patent Title: Method for producing a mask for the lithographic projection of a pattern onto a substrate
- Patent Title (中): 用于制造用于将图案的光刻投影到基板上的掩模的方法
-
Application No.: US11668565Application Date: 2007-01-30
-
Publication No.: US07644389B2Publication Date: 2010-01-05
- Inventor: Mario Hennig , Rainer Pforr , Gerd Unger
- Applicant: Mario Hennig , Rainer Pforr , Gerd Unger
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Edell, Shapiro & Finnan, LLC
- Priority: DE102006004230 20060130
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F1/00 ; G03C5/00

Abstract:
A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.
Public/Granted literature
- US20070196744A1 METHOD FOR PRODUCING A MASK FOR THE LITHOGRAPHIC PROJECTION OF A PATTERN ONTO A SUBSTRATE Public/Granted day:2007-08-23
Information query