Invention Grant
US07644387B2 Semiconductor mask correcting device and semiconductor mask correcting method
有权
半导体掩模校正装置和半导体掩模校正方法
- Patent Title: Semiconductor mask correcting device and semiconductor mask correcting method
- Patent Title (中): 半导体掩模校正装置和半导体掩模校正方法
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Application No.: US11796997Application Date: 2007-04-27
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Publication No.: US07644387B2Publication Date: 2010-01-05
- Inventor: Kokoro Kato
- Applicant: Kokoro Kato
- Applicant Address: JP Chiba
- Assignee: SII Nano Technology Inc.
- Current Assignee: SII Nano Technology Inc.
- Current Assignee Address: JP Chiba
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2006-128199 20060502
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F19/00 ; G03F1/00 ; G21K5/00

Abstract:
A semiconductor mask correcting device is provided with an image acquiring unit acquiring a mask image, an extraction unit extracting only a main pattern from the mask data, an inspection unit inspecting a defective portion by comparing the extracted main pattern with a main pattern which is obtained from the mask image after a drawing by matching to each other, and a correction unit correcting the defective portion specified by the inspection unit, wherein the extraction unit includes a recognition section recognizing the main pattern and the assist pattern as a figure, a specification section specifying the assist pattern from figures which is recognized on the basis of a predetermined condition, and a main pattern extracting section extracting as the main pattern a figure other than the assist pattern.
Public/Granted literature
- US20070262272A1 Semiconductor mask correcting device and semiconductor mask correcting method Public/Granted day:2007-11-15
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