Invention Grant
- Patent Title: Semiconductor memory tester
- Patent Title (中): 半导体存储器测试仪
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Application No.: US11819025Application Date: 2007-06-25
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Publication No.: US07644324B2Publication Date: 2010-01-05
- Inventor: Hisaki Arasawa
- Applicant: Hisaki Arasawa
- Applicant Address: JP Tokyo
- Assignee: Yokogawa Electric Corporation
- Current Assignee: Yokogawa Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-175545 20060626
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
There is implemented a semiconductor memory tester capable of efficiently conducting a test on a fast memory by programming according to parameters of a device without being attended by complex program handling. The semiconductor memory tester for determining pass/fail on a memory device under test is characterized in comprising a measurement division for comparing an output from the memory device under test with an expected value at timing on the basis of a clock outputted by the memory device under test.
Public/Granted literature
- US20070297255A1 Semiconductor memory tester Public/Granted day:2007-12-27
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