Invention Grant
- Patent Title: Apparatus and method for manufacturing semiconductor devices
- Patent Title (中): 用于制造半导体器件的装置和方法
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Application No.: US11727519Application Date: 2007-03-27
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Publication No.: US07643736B2Publication Date: 2010-01-05
- Inventor: Takaharu Itani
- Applicant: Takaharu Itani
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2006-091812 20060329
- Main IPC: F26B19/00
- IPC: F26B19/00 ; F27B5/14
Abstract:
An apparatus for manufacturing a semiconductor device includes a treatment chamber in which a working substrate is disposed; a plurality of lamps provided above the treatment chamber; and a reflector provided behind the lamps relative to a direction towards the working substrate, spatially controlling an in-plane distribution of reflection rate of light beams from the lamps, and irradiating the working substrate with light from the lamps.
Public/Granted literature
- US20070232083A1 Apparatus and method for manufacturing semiconductor devices Public/Granted day:2007-10-04
Information query
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