Invention Grant
- Patent Title: Power control circuit for semiconductor IC
- Patent Title (中): 半导体IC功率控制电路
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Application No.: US11969968Application Date: 2008-01-07
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Publication No.: US07643368B2Publication Date: 2010-01-05
- Inventor: Chang-Jun Choi , Suhwan Kim
- Applicant: Chang-Jun Choi , Suhwan Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0002112 20070108
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A power control circuit and related method providing power to an output terminal supplying a logic block within a semiconductor integrated circuit are disclosed. The power control circuit includes a power gating circuit providing a main power voltage to the output terminal during a normal operating mode and providing a retention voltage to the output terminal during a data retention mode characterized by the absence of the main power voltage from the logic block, wherein the retention voltage is minimally sufficient to retain data stored in the logic block during the data retention mode.
Public/Granted literature
- US20080165608A1 POWER CONTROL CIRCUIT FOR SEMICONDUCTOR IC Public/Granted day:2008-07-10
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