A non volatile semiconductor memory device wherein it is possible to transfer Vpp without a drop in voltage of the transfer transistor Vth (threshold voltage) in a transfer circuit or decoder circuit for selectively transferring Vpp by using a usual LVP (low voltage P type transistor) to reduce step(s) of production process and costs. An LVP (low voltage P type transistor) instead of a HVP (high voltage P type transistor) for a transfer circuit is used. Two-way diodes each of which threshold value becomes about Vdd are inserted between the gate and the drain.