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US07643342B2 Multi-bit-per-cell flash memory device with non-bijective mapping 失效
具有非双射映射的多比特单元闪存器件

Multi-bit-per-cell flash memory device with non-bijective mapping
Abstract:
To store a plurality of input bits, the bits are mapped to a corresponding programmed state of one or more memory cells and the cell(s) is/are programmed to that corresponding programmed state. The mapping may be many-to-one or may be an “into” generalized Gray mapping. The cell(s) is/are read to provide a read state value that is transformed into a plurality of output bits, for example by maximum likelihood decoding or by mapping the read state value into a plurality of soft bits and then decoding the soft bits.
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