Invention Grant
- Patent Title: Multi-bit-per-cell flash memory device with non-bijective mapping
- Patent Title (中): 具有非双射映射的多比特单元闪存器件
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Application No.: US12045733Application Date: 2008-03-11
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Publication No.: US07643342B2Publication Date: 2010-01-05
- Inventor: Simon Litsyn , Eran Sharon , Idan Alrod
- Applicant: Simon Litsyn , Eran Sharon , Idan Alrod
- Applicant Address: IL Tel Aviv
- Assignee: Ramot at Tel-Aviv University Ltd.
- Current Assignee: Ramot at Tel-Aviv University Ltd.
- Current Assignee Address: IL Tel Aviv
- Agent Mark M. Friedman
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/06 ; G06F12/00 ; G06F13/00

Abstract:
To store a plurality of input bits, the bits are mapped to a corresponding programmed state of one or more memory cells and the cell(s) is/are programmed to that corresponding programmed state. The mapping may be many-to-one or may be an “into” generalized Gray mapping. The cell(s) is/are read to provide a read state value that is transformed into a plurality of output bits, for example by maximum likelihood decoding or by mapping the read state value into a plurality of soft bits and then decoding the soft bits.
Public/Granted literature
- US20080291724A1 MULTI-BIT-PER-CELL FLASH MEMORY DEVICE WITH NON-BIJECTIVE MAPPING Public/Granted day:2008-11-27
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