A method for programming a flash memory device includes applying a program bias to a memory cell of a plurality of memory cells within a memory cell string. Each memory cell string comprises a source select line, a plurality of memory cells and a drain select line. A first pass bias is applied to at least one of the memory cells in a source select line direction relative to the memory cell to which the program bias has been applied. A second pass bias is applied to the memory cells in a drain select line direction relative the memory cell(s) to which the first pass bias has been applied.