Invention Grant
- Patent Title: Anti-parallel magnetization layers in the free layers and magnetization layers of a differential sensor read head
- Patent Title (中): 反平行磁化层在自由层和磁化层中的差分传感器读头
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Application No.: US11378824Application Date: 2006-03-17
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Publication No.: US07643255B2Publication Date: 2010-01-05
- Inventor: Hardayal (Harry) Singh Gill
- Applicant: Hardayal (Harry) Singh Gill
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
One embodiment of the present invention is directed to a read head for a data storage device including a differential sensor for reading data from a data storage medium. The differential sensor includes a first and a second free layer. The magnetization of the free layers is anti-parallel. The read head also includes a first stabilization material disposed adjacent to the differential sensor. The first stabilization material includes a first hard magnet and a second hard magnet. The magnetization of the hard magnets is anti-parallel to each other. The read head also includes a second stabilization material disposed adjacent to the differential sensor. The second stabilization material includes a first hard magnet and a second hard magnet, wherein the magnetization of the hard magnets is anti-parallel to each other. The anti-parallel coupling of the first stabilization material and the second stabilization material enhances the anti-parallel magnetization of the free layers.
Public/Granted literature
- US20070217089A1 Reduction in sensitivity to longitudinal stray fields in differential sensors Public/Granted day:2007-09-20
Information query
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