A thin-film resistor that has a stable electric resistance, the phase transformation to the α-phase being suppressed even in the high temperature environment, is provided. The thin-film resistor has a layered structure of: a base layer formed of a double-layered film in which an alloy film containing nickel and copper, an alloy film containing nickel and chromium or an alloy film containing copper and manganese is stacked on a tantalum film, or formed of a single alloy film containing nickel and chromium; and an electric resistance layer formed of a β-phase tantalum film or an alloy film mainly containing β-phase tantalum, and deposited on the base layer, the electric resistance layer having a crystal structure in which (002) plane of the β-phase crystal is most strongly oriented to the layer surface.