Invention Grant
- Patent Title: High aperture-ratio top-reflective AM-iMod displays
- Patent Title (中): 高开口率顶部反光AM-iMod显示屏
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Application No.: US11765276Application Date: 2007-06-19
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Publication No.: US07643199B2Publication Date: 2010-01-05
- Inventor: Je-Hsiung Lan
- Applicant: Je-Hsiung Lan
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G02F1/03
- IPC: G02F1/03 ; G02B26/00

Abstract:
High-aperture-ratio devices comprise active-matrix elements and interferometric modulators and methods of making thereof. The active-matrix element may be positioned behind the interferometric modulator with respect to incident light. In some embodiments, components of the active-matrix element may be formed on a first substrate, while components of the interferometric modulator may be formed on a second substrate, and the substrates may then be attached.
Public/Granted literature
- US20080316566A1 HIGH APERTURE-RATIO TOP-REFLECTIVE AM-IMOD DISPLAYS Public/Granted day:2008-12-25
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