Invention Grant
- Patent Title: Inductor structure
- Patent Title (中): 电感结构
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Application No.: US11742388Application Date: 2007-04-30
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Publication No.: US07642890B2Publication Date: 2010-01-05
- Inventor: Sheng-Yuan Lee
- Applicant: Sheng-Yuan Lee
- Applicant Address: TW Taipei Hsien
- Assignee: VIA Technologies, Inc.
- Current Assignee: VIA Technologies, Inc.
- Current Assignee Address: TW Taipei Hsien
- Agency: J.C. Patents
- Priority: TW96105237A 20070213
- Main IPC: H01F5/00
- IPC: H01F5/00

Abstract:
An inductor structure including a first winding turn and a second winding turn is provided. The first winding turn is disposed above a substrate. The second winding turn is disposed between the first winding turn and the substrate. One end of the second winding turn is grounded, and the other end of the second winding turn and the first winding turn are electrically connected in series. The first winding turn and the second winding turn form a three-dimensional helix structure above the substrate. The width of the second winding turn is greater than that of the first winding turn, and furthermore, the first winding turn is projected onto the second winding turn.
Public/Granted literature
- US20080191829A1 INDUCTOR STRUCTURE Public/Granted day:2008-08-14
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