Invention Grant
US07642843B2 Reference voltage generating circuit and semiconductor integrated circuit device 有权
参考电压发生电路和半导体集成电路器件

  • Patent Title: Reference voltage generating circuit and semiconductor integrated circuit device
  • Patent Title (中): 参考电压发生电路和半导体集成电路器件
  • Application No.: US12018375
    Application Date: 2008-01-23
  • Publication No.: US07642843B2
    Publication Date: 2010-01-05
  • Inventor: Yoshiro Riho
  • Applicant: Yoshiro Riho
  • Applicant Address: JP Tokyo
  • Assignee: Elpida Memory Inc.
  • Current Assignee: Elpida Memory Inc.
  • Current Assignee Address: JP Tokyo
  • Agency: Young & Thompson
  • Priority: JP2007-013178 20070123
  • Main IPC: G05F1/10
  • IPC: G05F1/10
Reference voltage generating circuit and semiconductor integrated circuit device
Abstract:
A reference voltage generating circuit comprises: a monitor circuit, including a low threshold voltage PMOS transistor, a low threshold voltage NMOS transistor, and a resistor having a predetermined resistance which are connected in series, for generating a reference voltage at one end; and an additional circuit for supplying a monitor current to the monitor circuit and for controlling the other end of the monitor circuit to be at a constant voltage, wherein a voltage value of the reference voltage is corrected within a range corresponding to a process fluctuation from a predetermined center value, based on the monitor current changing in response to the process fluctuation.
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