A voltage redoubling circuit, wherein said circuit relies on a voltage-detecting unit, an oscillating unit, an inversing unit, a first switching device, a second switching device, a third switching device, a fourth switching device, and a fifth switching device to pump a reference voltage to an output voltage. In such a way, a conducted memory cell can be quickly and accurately accessed via a circuit operated in a low voltage region by a single on-and-off signal rather than a number of pulse control signals.