Invention Grant
US07642772B1 Non-contact method and apparatus for measurement of leakage current of p-n junctions in IC product wafers 失效
用于测量IC产品晶片中p-n结的漏电流的非接触方法和装置

Non-contact method and apparatus for measurement of leakage current of p-n junctions in IC product wafers
Abstract:
A non-contact apparatus and method for measuring of the leakage current and capacitance of p-n junctions in test structures within scribe lanes of IC product wafers is disclosed. The apparatus comprises of a light source optically coupled with a fiber to a transparent electrode at the end of the fiber, which is brought close to the p-n junction under test. The ac signal generated from the test p-n junction is captured by this transparent and conducting coating electrode. The leakage current of a test p-n junction is determined using the frequency dependence of junction photo-voltage signal and reference signals from a p-n junction with low leakage current and known capacitance.
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