Invention Grant
US07642772B1 Non-contact method and apparatus for measurement of leakage current of p-n junctions in IC product wafers
失效
用于测量IC产品晶片中p-n结的漏电流的非接触方法和装置
- Patent Title: Non-contact method and apparatus for measurement of leakage current of p-n junctions in IC product wafers
- Patent Title (中): 用于测量IC产品晶片中p-n结的漏电流的非接触方法和装置
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Application No.: US11982624Application Date: 2007-11-05
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Publication No.: US07642772B1Publication Date: 2010-01-05
- Inventor: Vladimir Faifer , Michael Current , Timothy Wong
- Applicant: Vladimir Faifer , Michael Current , Timothy Wong
- Applicant Address: US CA San Jose
- Assignee: Ahbee 1, L.P.
- Current Assignee: Ahbee 1, L.P.
- Current Assignee Address: US CA San Jose
- Main IPC: G01R31/28
- IPC: G01R31/28

Abstract:
A non-contact apparatus and method for measuring of the leakage current and capacitance of p-n junctions in test structures within scribe lanes of IC product wafers is disclosed. The apparatus comprises of a light source optically coupled with a fiber to a transparent electrode at the end of the fiber, which is brought close to the p-n junction under test. The ac signal generated from the test p-n junction is captured by this transparent and conducting coating electrode. The leakage current of a test p-n junction is determined using the frequency dependence of junction photo-voltage signal and reference signals from a p-n junction with low leakage current and known capacitance.
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