Invention Grant
- Patent Title: Piezoelectric thin-film resonator
- Patent Title (中): 压电薄膜谐振器
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Application No.: US11836990Application Date: 2007-08-10
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Publication No.: US07642695B2Publication Date: 2010-01-05
- Inventor: Hidetoshi Fujii
- Applicant: Hidetoshi Fujii
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2005-043591 20050221
- Main IPC: H03H9/17
- IPC: H03H9/17

Abstract:
A piezoelectric thin-film resonator and a method of manufacturing thereof eliminate and prevent breaking of a piezoelectric thin film, disconnection of electrodes, and other known problems. The piezoelectric thin-film resonator includes a substrate and a suspended portion including a vibrating portion in which a piezoelectric thin film is disposed between a pair of excitation electrodes. At least two film-like supports partially supported on the substrate are provided. The suspended portion is supported by the supports so as to be suspended above the substrate with an air-gap layer therebetween.
Public/Granted literature
- US20070278899A1 PIEZOELECTRIC THIN-FILM RESONATOR Public/Granted day:2007-12-06
Information query
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