Invention Grant
US07642658B2 Pad structure to prompt excellent bondability for low-k intermetal dielectric layers
失效
垫结构为低k金属间电介质层提供出色的粘合性
- Patent Title: Pad structure to prompt excellent bondability for low-k intermetal dielectric layers
- Patent Title (中): 垫结构为低k金属间电介质层提供出色的粘合性
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Application No.: US11244970Application Date: 2005-10-06
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Publication No.: US07642658B2Publication Date: 2010-01-05
- Inventor: Tze-Liang Lee , Yun-San Huan
- Applicant: Tze-Liang Lee , Yun-San Huan
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A method of fabricating a bonding pad anchoring structure comprising the following steps. Providing a substrate. Forming a series of grated metal layers over the substrate separated by an interleaving series of via plug layers having via plugs electrically connecting respective at least a portion of adjacent grated metal layers. The series of grated metal layers having an uppermost grated metal layer. Forming an uppermost via plug layer over the uppermost grated metal layer. The uppermost via plug layer having via plugs. Forming a bonding pad layer over the uppermost via plug layer so that the uppermost via plugs within the uppermost via plug layer electrically connect the bonding pad layer to at least a portion of the uppermost grated metal layer whereby the bonding pad layer is securely bonded to the substrate.
Public/Granted literature
- US20060060967A1 Novel pad structure to prompt excellent bondability for low-k intermetal dielectric layers Public/Granted day:2006-03-23
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