Invention Grant
- Patent Title: Semiconductor device and method of manufacture thereof
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US11142560Application Date: 2005-06-01
-
Publication No.: US07642655B2Publication Date: 2010-01-05
- Inventor: Yoshiyuki Enomoto , Ryuichi Kanamura
- Applicant: Yoshiyuki Enomoto , Ryuichi Kanamura
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sonnenschein Nath & Rosenthal LLP
- Priority: JP2000-373821 20001208; WOPCT/JP01/10611 20011205
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
In order to form an aluminum system wiring that does not peel off on an insulating film containing fluorine and to improve the reliability thereof, a semiconductor device according to the present invention includes an insulating film (14) containing fluorine formed on a substrate (11), a titanium aluminum alloy film (17a) formed on the insulating film (14) containing fluorine, and a metallic film (17b) comprising aluminum or an aluminum alloy formed on the titanium aluminum alloy film (17a).
Public/Granted literature
- US20050227467A1 Semiconductor device and method of manufacture thereof Public/Granted day:2005-10-13
Information query
IPC分类:
