Invention Grant
- Patent Title: Semiconductor device having a pillar structure
- Patent Title (中): 具有柱结构的半导体器件
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Application No.: US10780701Application Date: 2004-02-19
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Publication No.: US07642650B2Publication Date: 2010-01-05
- Inventor: Iwao Sugiura , Takahisa Namiki , Yoshihiro Matsuoka
- Applicant: Iwao Sugiura , Takahisa Namiki , Yoshihiro Matsuoka
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2003-047768 20030225; JP2003-280004 20030725
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A semiconductor device includes a first multilayer interconnection structure formed on a substrate and a second multilayer interconnection structure formed on the first multilayer interconnection structure, wherein the first multilayer interconnection structure includes a pillar extending from a surface of the substrate and reaching at least the second multilayer interconnection structure.
Public/Granted literature
- US20040164418A1 Semiconductor device having a pillar structure Public/Granted day:2004-08-26
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