Invention Grant
- Patent Title: Semiconductor device having a reductant layer and manufacturing method thereof
- Patent Title (中): 具有还原层的半导体装置及其制造方法
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Application No.: US12416387Application Date: 2009-04-01
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Publication No.: US07642648B2Publication Date: 2010-01-05
- Inventor: Jung Joo Kim
- Applicant: Jung Joo Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co. Ltd.
- Current Assignee: Dongbu Electronics Co. Ltd.
- Current Assignee Address: KR Seoul
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: KR10-2004-0117694 20041231
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor device includes an inter-metal dielectric (IMD) formed on a substrate and having at least one via hole, a via hole formed by filling the via hole with a first metal, a reductant layer formed on the via plug and the inter-metal dielectric to a predetermined thickness, and a metal line layer formed by depositing a second metal on the reductant layer.
Public/Granted literature
- US20090189284A1 SEMICONDUCTOR DEVICE HAVING A REDUCTANT LAYER AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-07-30
Information query
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