Invention Grant
- Patent Title: Carrier for stacked type semiconductor device and method of fabricating the same
- Patent Title (中): 层叠型半导体器件用载体及其制造方法
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Application No.: US11894828Application Date: 2007-08-22
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Publication No.: US07642637B2Publication Date: 2010-01-05
- Inventor: Masanori Onodera , Junichi Kasai , Kouichi Meguro , Junji Tanaka , Yasuhiro Shinma , Koji Taya
- Applicant: Masanori Onodera , Junichi Kasai , Kouichi Meguro , Junji Tanaka , Yasuhiro Shinma , Koji Taya
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A carrier for a stacked type semiconductor device includes a lower carrier having a first accommodating portion that accommodates a first semiconductor device, and an upper carrier having a second accommodating portion that accommodates a second semiconductor device stacked on the first semiconductor device so as to be placed in position on the first semiconductor device. It is thus possible to eliminate an additional device used for stacking the semiconductor device, and thereby reduce the cost.
Public/Granted literature
- US20070290320A1 Carrier for stacked type semiconductor device and method of fabricating the same Public/Granted day:2007-12-20
Information query
IPC分类: