Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11461634Application Date: 2006-08-01
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Publication No.: US07642627B2Publication Date: 2010-01-05
- Inventor: Yasuo Yamasaki
- Applicant: Yasuo Yamasaki
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2005-223804 20050802
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A semiconductor device includes a semiconductor substrate having an electrode and a conductive pad; a resin projection formed on the semiconductor substrate; and a wiring electrically connected to the electrode, the wiring having a first portion formed on the electrode, a second portion formed on the conductive pad and a third portion formed on the resin projection between the first portion and the second portion.
Public/Granted literature
- US20070029671A1 SEMICONDUCTOR DEVICE Public/Granted day:2007-02-08
Information query
IPC分类:
