Invention Grant
- Patent Title: Semiconductor devices including mesa structures and multiple passivation layers
- Patent Title (中): 半导体器件包括台面结构和多个钝化层
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Application No.: US11959725Application Date: 2007-12-19
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Publication No.: US07642626B2Publication Date: 2010-01-05
- Inventor: Kevin Ward Haberern , Raymond Rosado , Michael John Bergman , David Todd Emerson
- Applicant: Kevin Ward Haberern , Raymond Rosado , Michael John Bergman , David Todd Emerson
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L33/00 ; H01L29/74 ; H01L31/111
Abstract:
A semiconductor device including a semiconductor structure defining a mesa having a mesa surface and mesa sidewalls, and first and second passivation layers. The first passivation layer may be on at least portions of the mesa sidewalls, at least a portion of the mesa surface may be free of the first passivation layer, and the first passivation layer may include a first material. The second passivation layer may be on the first passivation layer, at least a portion of the mesa surface may be free of the second passivation layer, and the second passivation layer may include a second material different than the first material.
Public/Granted literature
- US20080135982A1 SEMICONDUCTOR DEVICES INCLUDING MESA STRUCTURES AND MULTIPLE PASSIVATION LAYERS Public/Granted day:2008-06-12
Information query
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