Invention Grant
US07642625B2 Method of evaluating thermal stress resistance of semiconductor device, and semiconductor wafer having test element
有权
评价半导体装置的耐热应力的方法以及具有测试元件的半导体晶片
- Patent Title: Method of evaluating thermal stress resistance of semiconductor device, and semiconductor wafer having test element
- Patent Title (中): 评价半导体装置的耐热应力的方法以及具有测试元件的半导体晶片
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Application No.: US12139717Application Date: 2008-06-16
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Publication No.: US07642625B2Publication Date: 2010-01-05
- Inventor: Kazutaka Otsuki
- Applicant: Kazutaka Otsuki
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-158203 20070615
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L29/10

Abstract:
A thermal stress resistance evaluating method of a semiconductor device includes: forming a test circuit on a corner of each of unit regions arranged on a wafer in an array arrangement; forming a TEG chip by dicing a TEG chip region which is determined by grouping at least two of the unit regions in a predetermined shape; assembling a packaged TEG chip from the TEG chip; and executing a temperature cycling test on the packaged TEG chip by using the test circuit on the TEG chip. According to such a configuration, by adjusting the predetermined shape, the packaged TEG chip of various sizes can be formed in accordance with the design of the product chip size.
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