Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US11424456Application Date: 2006-06-15
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Publication No.: US07642612B2Publication Date: 2010-01-05
- Inventor: Konami Izumi , Mayumi Yamaguchi
- Applicant: Konami Izumi , Mayumi Yamaguchi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2005-178612 20050617
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L23/58

Abstract:
It has been difficult to manufacture a semiconductor device equipped with a microstructure having a space, an electric circuit for controlling the microstructure, and the like over one substrate.In a semiconductor device, a microstructure and an electric circuit for controlling the microstructure can be provided over one substrate by manufacturing the microstructure in such a way that a structural layer having polycrystalline silicon obtained by laser crystallization or thermal crystallization using a metal element is formed and processed at low temperature. As the electric circuit, a wireless communication circuit for carrying out wireless communication with an antenna is given.
Public/Granted literature
- US20060284183A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2006-12-21
Information query
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