Invention Grant
US07642600B1 System and method for providing a low voltage thin gate input/output structure with thick gate overvoltage/backdrive protection 有权
用于提供具有厚栅极过压/反向驱动保护的低电压薄栅极输入/输出结构的系统和方法

  • Patent Title: System and method for providing a low voltage thin gate input/output structure with thick gate overvoltage/backdrive protection
  • Patent Title (中): 用于提供具有厚栅极过压/反向驱动保护的低电压薄栅极输入/输出结构的系统和方法
  • Application No.: US11635321
    Application Date: 2006-12-07
  • Publication No.: US07642600B1
    Publication Date: 2010-01-05
  • Inventor: Joseph D. Wert
  • Applicant: Joseph D. Wert
  • Applicant Address: US CA Santa Clara
  • Assignee: National Semiconductor Corporation
  • Current Assignee: National Semiconductor Corporation
  • Current Assignee Address: US CA Santa Clara
  • Main IPC: H01L23/62
  • IPC: H01L23/62
System and method for providing a low voltage thin gate input/output structure with thick gate overvoltage/backdrive protection
Abstract:
A system and method are disclosed for providing an integrated circuit low voltage thin gate input/output structure with thick gate overvoltage/backdrive protection. In an advantageous embodiment of the present invention, a transfer gate of the input/output structure comprises at least one thick gate native (or depletion) n-channel metal oxide semiconductor (NMOS) transistor that is connected to an output pad node of the input/output structure. The thick gate native (or depletion) NMOS transistor prevents current from the output pad node from entering the input/output structure when a voltage level of the output pad node is high.
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