Invention Grant
US07642600B1 System and method for providing a low voltage thin gate input/output structure with thick gate overvoltage/backdrive protection
有权
用于提供具有厚栅极过压/反向驱动保护的低电压薄栅极输入/输出结构的系统和方法
- Patent Title: System and method for providing a low voltage thin gate input/output structure with thick gate overvoltage/backdrive protection
- Patent Title (中): 用于提供具有厚栅极过压/反向驱动保护的低电压薄栅极输入/输出结构的系统和方法
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Application No.: US11635321Application Date: 2006-12-07
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Publication No.: US07642600B1Publication Date: 2010-01-05
- Inventor: Joseph D. Wert
- Applicant: Joseph D. Wert
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L23/62
- IPC: H01L23/62

Abstract:
A system and method are disclosed for providing an integrated circuit low voltage thin gate input/output structure with thick gate overvoltage/backdrive protection. In an advantageous embodiment of the present invention, a transfer gate of the input/output structure comprises at least one thick gate native (or depletion) n-channel metal oxide semiconductor (NMOS) transistor that is connected to an output pad node of the input/output structure. The thick gate native (or depletion) NMOS transistor prevents current from the output pad node from entering the input/output structure when a voltage level of the output pad node is high.
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