Invention Grant
- Patent Title: Method of fabricating a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11926552Application Date: 2007-10-29
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Publication No.: US07642598B2Publication Date: 2010-01-05
- Inventor: Shunpei Yamazaki , Hisashi Ohtani
- Applicant: Shunpei Yamazaki , Hisashi Ohtani
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP10-251635 19980904
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.
Public/Granted literature
- US20080113487A1 Method of Fabricating A Semiconductor Device Public/Granted day:2008-05-15
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