Invention Grant
- Patent Title: Multi-resistive integrated circuit memory
- Patent Title (中): 多电阻集成电路存储器
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Application No.: US11379441Application Date: 2006-04-20
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Publication No.: US07642591B2Publication Date: 2010-01-05
- Inventor: R. Jacob Baker , Kurt D. Beigel
- Applicant: R. Jacob Baker , Kurt D. Beigel
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L41/00
- IPC: H01L41/00
Abstract:
A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a second portion, wherein the first portion and the second portion are arranged in a predetermined pattern relative to one another to provide a maximum amount of capacitance per semiconductor die area.
Public/Granted literature
- US20060198179A1 MULTI-RESISTIVE INTEGRATED CIRCUIT MEMORY Public/Granted day:2006-09-07
Information query
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