Invention Grant
- Patent Title: Solid-state image sensing device
- Patent Title (中): 固态摄像装置
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Application No.: US12259350Application Date: 2008-10-28
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Publication No.: US07642581B2Publication Date: 2010-01-05
- Inventor: Shunsuke Inoue
- Applicant: Shunsuke Inoue
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2005-171659 20050610
- Main IPC: H01L31/062
- IPC: H01L31/062

Abstract:
A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.
Public/Granted literature
- US20090050945A1 SOLID-STATE IMAGE SENSING DEVICE Public/Granted day:2009-02-26
Information query
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