Invention Grant
- Patent Title: Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same
- Patent Title (中): 具有圆形纳米线晶体管沟道的半导体器件及其制造方法
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Application No.: US11303408Application Date: 2005-12-16
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Publication No.: US07642578B2Publication Date: 2010-01-05
- Inventor: Sungyoung Lee , Dongsuk Shin
- Applicant: Sungyoung Lee , Dongsuk Shin
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2005-0024543 20050324
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A field-effect transistor (FET) with a round-shaped nano-wire channel and a method of manufacturing the FET are provided. According to the method, source and drain regions are formed on a semiconductor substrate. A plurality of preliminary channel regions is coupled between the source and drain regions. The preliminary channel regions are etched, and the etched preliminary channel regions are annealed to form FET channel regions, the FET channel regions having a substantially circular cross-sectional shape.
Public/Granted literature
- US20060216897A1 Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same Public/Granted day:2006-09-28
Information query
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