Invention Grant
- Patent Title: Long-wavelength resonant-cavity light-emitting diode
- Patent Title (中): 长波长谐振腔发光二极管
-
Application No.: US11864059Application Date: 2007-09-28
-
Publication No.: US07642562B2Publication Date: 2010-01-05
- Inventor: Alexey Kovsh , Igor Krestnikov , Sergey Mikhrin , Daniil Livshits
- Applicant: Alexey Kovsh , Igor Krestnikov , Sergey Mikhrin , Daniil Livshits
- Applicant Address: DE Dortmund
- Assignee: Innolume GmbH
- Current Assignee: Innolume GmbH
- Current Assignee Address: DE Dortmund
- Agency: Brown & Michaels, PC
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting active region, deposited on a GaAs substrate. The light-emitting diode is capable of emitting in a long-wavelength spectral range of preferably 1.15-1.35 μm. The light-emitting diode also has a high efficiency of preferably at least 6 mW and more preferably at least 8 mW at an operating current of less than 100 mA and a low operating voltage of preferably less than 3V. In addition, the light-emitting diode preferably has an intensity of maxima, other than the main maximum of the emission spectrum, of less than 1% of an intensity of the main maximum. This combination of parameters makes such a device useful as an inexpensive optical source for various applications.
Public/Granted literature
- US20080079016A1 LONG-WAVELENGTH RESONANT-CAVITY LIGHT-EMITTING DIODE Public/Granted day:2008-04-03
Information query
IPC分类: