Invention Grant
- Patent Title: Phase change memory cells delineated by regions of modified film resistivity
- Patent Title (中): 由改性膜电阻率区域划分的相变记忆单元
-
Application No.: US12407068Application Date: 2009-03-19
-
Publication No.: US07642549B2Publication Date: 2010-01-05
- Inventor: John Christopher Arnold , Tricia Breen Carmichael
- Applicant: John Christopher Arnold , Tricia Breen Carmichael
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Graham S. Jones, II; Daniel P. Morris; Robert M. Trepp
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/18
Abstract:
A Phase Change Memory (PCM) cell structure comprises both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM layer is protected from damage by the conductive encapsulating layer. Electrical isolation between adjacent PCM cells is provided by high electrical resistance regions which were formed by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof.
Public/Granted literature
- US20090179186A1 Phase change memory cells delineated by regions of modified film resistivity Public/Granted day:2009-07-16
Information query
IPC分类:
