Invention Grant
- Patent Title: Semiconductor light-emitting device and producing method for the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US11531577Application Date: 2006-09-13
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Publication No.: US07642542B2Publication Date: 2010-01-05
- Inventor: Mariko Suzuki , Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida
- Applicant: Mariko Suzuki , Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Hiroaki Yoshida
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-285592 20050929
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00 ; H01L29/24

Abstract:
A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.
Public/Granted literature
- US20070114539A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCING METHOD FOR THE SAME Public/Granted day:2007-05-24
Information query
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