Invention Grant
US07642502B2 Photo relay having an insulated gate field effect transistor with variable impedance
有权
具有可变阻抗的绝缘栅场效应晶体管的照相继电器
- Patent Title: Photo relay having an insulated gate field effect transistor with variable impedance
- Patent Title (中): 具有可变阻抗的绝缘栅场效应晶体管的照相继电器
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Application No.: US12331003Application Date: 2008-12-09
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Publication No.: US07642502B2Publication Date: 2010-01-05
- Inventor: Naoya Tajiri
- Applicant: Naoya Tajiri
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2007-321294 20071212
- Main IPC: H01J40/14
- IPC: H01J40/14
Abstract:
A LED is provided to emit a light signal corresponding to an input signal. A PD receives the light signal, and generates a photovoltaic output. A MOSFET receives the photovoltaic output. A FET is provided. A first electrode of the FET is connected to the gate of the MOSFET. A second electrode of the FET is connected to a cathode of the PD through a resistor. A control electrode of the FET is connected to the cathode of the PD. A transistor is provided. A first electrode of the transistor is connected to the gate of the MOSFET. A second electrode of the transistor is connected to the source of the MOSFET. A control electrode of the transistor is connected to the second electrode of the FET. A diode is connected between the second electrode of the FET and the second electrode of the transistor.
Public/Granted literature
- US20090152443A1 PHOTO RELAY Public/Granted day:2009-06-18
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