Invention Grant
- Patent Title: Passivation layer for semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体器件钝化层及其制造方法
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Application No.: US11609897Application Date: 2006-12-12
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Publication No.: US07642203B2Publication Date: 2010-01-05
- Inventor: Seung Hyun Kim
- Applicant: Seung Hyun Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2005-01311499 20051228
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
Embodiments relate to a passivation layer for a semiconductor device that may be formed in a substrate having a plurality of semiconductor devices. The passivation layer may includes a first passivation layer, a second passivation layer, and a third passivation layer, and the passivation layer may have a laminated triple layer structure.
Public/Granted literature
- US20070148987A1 PASSIVATION LAYER FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2007-06-28
Information query
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