Invention Grant
- Patent Title: Sequential tantalum-nitride deposition
- Patent Title (中): 顺序氮化钽沉积
-
Application No.: US12018813Application Date: 2008-01-24
-
Publication No.: US07642201B2Publication Date: 2010-01-05
- Inventor: Frank M. Cerio, Jr. , Shigeru Mizuno , Tsukasa Matsuda , Adam Selsey
- Applicant: Frank M. Cerio, Jr. , Shigeru Mizuno , Tsukasa Matsuda , Adam Selsey
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/31
- IPC: H01L21/31

Abstract:
An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a multi-step process within a vacuum chamber which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang.
Public/Granted literature
- US20090191721A1 SEQUENTIAL TANTALUM-NITRIDE DEPOSITION Public/Granted day:2009-07-30
Information query
IPC分类: