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US07642201B2 Sequential tantalum-nitride deposition 失效
顺序氮化钽沉积

Sequential tantalum-nitride deposition
Abstract:
An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a multi-step process within a vacuum chamber which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang.
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