According to various embodiments, there are eSiGe CMOS devices and methods of making them. The method of making a substrate for a CMOS device can include providing a DSB silicon substrate including a first bonded to a second layer, wherein each layer has a (100) oriented surface and a first direction and a second direction and the first direction of the first layer is approximately aligned with the second direction of the second layer. The method can also include performing amorphization on a selected region of the first layer to form a localized amorphous silicon region and recrystallizing the localized amorphous silicon region across the interface using the second layer as a template, such that the first direction of the first layer in the selected region is approximately aligned with the first direction of the second layer.