Semiconductor fabrication processes

Invention Grant

US07642196B2 Semiconductor fabrication processes 失效

Title translation: 半导体制造工艺

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Patent Title: Semiconductor fabrication processes
Patent Title (中): 半导体制造工艺
Application No.: US11397400

Application Date: 2006-04-04
Publication No.: US07642196B2

Publication Date: 2010-01-05
Inventor: Kevin R. Shea , Niraj B. Rana
Applicant: Kevin R. Shea , Niraj B. Rana
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: Wells St. John P.S.
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L21/302

Abstract:

Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCl, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.

Abstract(Chinese):

在高方面，相对于硅，二氧化硅，氮化硅和掺杂的氧化硅中的一种或多种选择性地蚀刻含金属材料（例如，可以包括例如氮化钛的金属氮化物）的各种方法比例结构具有高蚀刻速率。蚀刻可以与臭氧，氢氧化铵，四甲基氢氧化铵，盐酸和/或过硫酸盐结合使用过氧化氢。本发明还可以利用臭氧与过氧化氢的组合，和/或与一种或多种氢氧化铵，四甲基氢氧化铵和过硫酸盐组合使用。本发明还可以使用具有或不具有过硫酸盐的臭氧，过氧化氢和HCl。本发明也可单独使用过氧化氢和磷酸盐，或与过硫酸盐组合使用。

Public/Granted literature

US20060177988A1 Semiconductor fabrication processes Public/Granted day:2006-08-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）