Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US11114111Application Date: 2005-04-26
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Publication No.: US07642192B2Publication Date: 2010-01-05
- Inventor: Kazuo Hashimi , Hidekazu Sato
- Applicant: Kazuo Hashimi , Hidekazu Sato
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Fujitsu Patent Center
- Priority: JP2004-199679 20040706; JP2005-042871 20050218
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A semiconductor device fabrication method includes the steps of (a) forming a dielectric film on a semiconductor substrate; (b) etching the dielectric film by a dry process; and (c) supplying thermally decomposed atomic hydrogen onto the semiconductor substrate under a prescribed temperature condition, to remove a damaged layer produced in the semiconductor substrate due to the dry process.
Public/Granted literature
- US20060006477A1 Semiconductor device and fabrication method thereof Public/Granted day:2006-01-12
Information query
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