Method of forming isolation layer in semiconductor device

Invention Grant

US07642172B2 Method of forming isolation layer in semiconductor device 失效

Title translation: 在半导体器件中形成隔离层的方法

Please log in to see more content

Patent Title: Method of forming isolation layer in semiconductor device
Patent Title (中): 在半导体器件中形成隔离层的方法
Application No.: US12326903

Application Date: 2008-12-03
Publication No.: US07642172B2

Publication Date: 2010-01-05
Inventor: Dae-Kyeun Kim
Applicant: Dae-Kyeun Kim
Applicant Address: KR Seoul
Assignee: Dongbu HiTek Co., Ltd.
Current Assignee: Dongbu HiTek Co., Ltd.
Current Assignee Address: KR Seoul
Agency: Sherr & Vaughn, PLLC
Priority: KR10-2007-0124442 20071203
Main IPC: H01L21/76
IPC: H01L21/76

Method of forming isolation layer in semiconductor device

Abstract:

A semiconductor device can include a semiconductor substrate, a first trench formed in the semiconductor substrate, a second trench formed in the semiconductor substrate, a first device isolation layer formed in the first trench, a second device isolation layer formed in the second trench having a different structure than the first device isolation layer.

Abstract(Chinese):

半导体器件可以包括半导体衬底，形成在半导体衬底中的第一沟槽，形成在半导体衬底中的第二沟槽，形成在第一沟槽中的第一器件隔离层，形成在第二沟槽中的第二器件隔离层，不同于第一个器件隔离层的结构。

Public/Granted literature

US20090140375A1 METHOD OF FORMING ISOLATION LAYER IN SEMICONDUCTOR DEVICE Public/Granted day:2009-06-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/76	...组件间隔离区的制作