Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11898020Application Date: 2007-09-07
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Publication No.: US07642162B2Publication Date: 2010-01-05
- Inventor: Kouji Matsuo
- Applicant: Kouji Matsuo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2006-243844 20060908
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device has plural columnar gate electrodes for plural MOSFETs formed in a row separately on a semiconductor substrate, and a semiconductor region which is formed in a part between the neighboring two columnar gate electrodes of the plural columnar gate electrodes to form a channel of the MOSFETs.
Public/Granted literature
- US20080061370A1 Semiconductor device and method of manufacturing the same Public/Granted day:2008-03-13
Information query
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