Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11551375Application Date: 2006-10-20
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Publication No.: US07642159B2Publication Date: 2010-01-05
- Inventor: Tae Hong Lim
- Applicant: Tae Hong Lim
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., ltd.
- Current Assignee: Dongbu HiTek Co., ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2005-0099662 20051021
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/38
Abstract:
A semiconductor device may include a semiconductor substrate having a recessed surface, a gate insulating layer formed on the recessed surface of the semiconductor substrate, a gate electrode formed on the gate insulating layer, and a source/drain area formed at both sides of the gate electrode, according to embodiments.
Public/Granted literature
- US20070102758A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2007-05-10
Information query
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