Semiconductor device with metal nitride barrier layer between gate dielectric and silicided, metallic gate electrodes

Invention Grant

US07642155B2 Semiconductor device with metal nitride barrier layer between gate dielectric and silicided, metallic gate electrodes 有权

Title translation: 具有金属氮化物阻挡层的半导体器件，位于栅极电介质和硅化金属栅电极之间

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Patent Title: Semiconductor device with metal nitride barrier layer between gate dielectric and silicided, metallic gate electrodes
Patent Title (中): 具有金属氮化物阻挡层的半导体器件，位于栅极电介质和硅化金属栅电极之间
Application No.: US11606034

Application Date: 2006-11-30
Publication No.: US07642155B2

Publication Date: 2010-01-05
Inventor: Takayuki Iwaki
Applicant: Takayuki Iwaki
Applicant Address: JP Kanagawa
Assignee: NEC Electronics Corporation
Current Assignee: NEC Electronics Corporation
Current Assignee Address: JP Kanagawa
Agency: Young & Thompson
Priority: JP2005-351830 20051206
Main IPC: H01L21/8244
IPC: H01L21/8244 ; H01L29/94

Semiconductor device with metal nitride barrier layer between gate dielectric and silicided, metallic gate electrodes

Abstract:

A method for manufacturing a semiconductor device includes: sequentially depositing a gate insulating film 104 composed of a high dielectric constant film containing one or more metallic element(s) selected from a group consisting of Hf, Zr, Al, La and Ta, a barrier film 106 composed of one or more metal nitride selected from a group consisting of TiN, TaN and WN, a metallic film 108 and a polycrystalline silicon film 110 on the semiconductor substrate (p-type semiconductor substrate 102a) to form a multiple-layered film; and silicidizing a lower portion of the polycrystalline silicon film 110 to form a lower layer (forming a first silicide layer 110a) by conducting a heat treatment of the multiple-layered film to diffuse the metal of the metallic film 108 into the polycrystalline silicon film 110.

Abstract(Chinese):

一种半导体器件的制造方法，其特征在于，依次层叠由高介电常数膜构成的栅极绝缘膜104，所述高介电常数膜含有选自Hf，Zr，Al，La和Ta中的一种或多种金属元素，由选自TiN，TaN和WN的一种或多种金属氮化物构成的薄膜106，半导体衬底（p型半导体衬底102a）上的金属膜108和多晶硅膜110，以形成多层膜 ; 并且通过进行多层膜的热处理以将金属膜108的金属扩散到多晶硅膜110中，使多晶硅膜110的下部硅化以形成下层（形成第一硅化物层110a）。

Public/Granted literature

US20070128791A1 Method for manufacturing semiconductor device and semiconductor device Public/Granted day:2007-06-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8244	.........静态随机存取存储结构（SRAM）