Method of fabricating spacers and cleaning method of post-etching and semiconductor device

Invention Grant

US07642152B2 Method of fabricating spacers and cleaning method of post-etching and semiconductor device 有权

Title translation: 制造间隔物的方法和后蚀刻和半导体器件的清洁方法

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Patent Title: Method of fabricating spacers and cleaning method of post-etching and semiconductor device
Patent Title (中): 制造间隔物的方法和后蚀刻和半导体器件的清洁方法
Application No.: US11221611

Application Date: 2005-09-07
Publication No.: US07642152B2

Publication Date: 2010-01-05
Inventor: Chuan-Kai Wang , Yi-Hsing Chen , Chia-Jui Liu , Juan-Yi Chen , Ming-Yi Lin
Applicant: Chuan-Kai Wang , Yi-Hsing Chen , Chia-Jui Liu , Juan-Yi Chen , Ming-Yi Lin
Applicant Address: TW Hsinchu
Assignee: United Microelectronics Corp.
Current Assignee: United Microelectronics Corp.
Current Assignee Address: TW Hsinchu
Agency: J.C. Patents
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L21/336 ; H01L21/31

Method of fabricating spacers and cleaning method of post-etching and semiconductor device

Abstract:

A method of fabricating spacers is provided. The method includes providing a substrate with a device structure formed thereon. The device structure comprises a gate structure and a pair of source/drain regions. Then, a spacer material layer is formed over the substrate to cover the substrate and the device structure. Thereafter, an etching process is performed to remove a portion of the spacer material layer so that spacers are formed on the respective sidewalls of the gate structure. After that, a plasma treatment step is performed to form a spacer protection layer on the surface of the substrate, the spacers and the gate structure.

Abstract(Chinese):

提供了制造间隔物的方法。该方法包括提供其上形成有器件结构的衬底。器件结构包括栅极结构和一对源极/漏极区域。然后，在衬底上形成间隔材料层以覆盖衬底和器件结构。此后，进行蚀刻处理以去除间隔材料层的一部分，使得在栅极结构的相应侧壁上形成间隔物。之后，执行等离子体处理步骤，以在衬底的表面，间隔物和栅极结构上形成间隔保护层。

Public/Granted literature

US20070054458A1 Method of fabricating spacers and cleaning method of post-etching and semiconductor device Public/Granted day:2007-03-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS