Method for producing electronic device

Invention Grant

US07642145B2 Method for producing electronic device 有权

Title translation: 电子装置的制造方法

Please log in to see more content

Patent Title: Method for producing electronic device
Patent Title (中): 电子装置的制造方法
Application No.: US10523247

Application Date: 2002-07-30
Publication No.: US07642145B2

Publication Date: 2010-01-05
Inventor: Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
Applicant: Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
Applicant Address: JP Tokyo
Assignee: Hitachi, Ltd.
Current Assignee: Hitachi, Ltd.
Current Assignee Address: JP Tokyo
Agency: Stites & Harbison PLLC
Agent Juan Carlos A. Marquez, Esq.
International Application: PCT/JP02/07760 WO 20020730
International Announcement: WO2004/012012 WO 20040205
Main IPC: H01L21/8238
IPC: H01L21/8238

Abstract:

There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.

Abstract(Chinese):

存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致的器件性能劣化，从而对系统性能产生不良影响。本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大，使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。

Public/Granted literature

US20060105273A1 Method for producing electronic device Public/Granted day:2006-05-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS