Invention Grant
- Patent Title: Image sensor fabricating method
- Patent Title (中): 图像传感器制造方法
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Application No.: US12002097Application Date: 2007-12-14
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Publication No.: US07642118B2Publication Date: 2010-01-05
- Inventor: Eun Sang Cho
- Applicant: Eun Sang Cho
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: The Law Offices of Andrew D. Fortney
- Agent Andrew D. Fortney
- Priority: KR10-2006-0135749 20061227
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of fabricating an image sensor includes forming a first SiO2 layer on a color filter layer, patterning a photosensitive layer on first SiO2 layer, patterning the first SiO2 layer through a first etching process, forming a second SiO2 layer on the first SiO2 layer, and forming a micro-lens by etching the second SiO2 layer.
Public/Granted literature
- US20080160665A1 Image sensor fabricating method Public/Granted day:2008-07-03
Information query
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