Invention Grant
- Patent Title: Rework process for photoresist film
- Patent Title (中): 光刻胶膜的返工工艺
-
Application No.: US11544552Application Date: 2006-10-10
-
Publication No.: US07642043B2Publication Date: 2010-01-05
- Inventor: Tsutomu Ogihara , Takafumi Ueda
- Applicant: Tsutomu Ogihara , Takafumi Ueda
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2005-331886 20051116
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F7/00 ; G03F7/004

Abstract:
There is disclosed a rework process for a photoresist film over a substrate having at least an antireflection silicone resin film and the photoresist film over the silicone resin film comprising: at least removing the photoresist film with a solvent while leaving the silicone resin film unremoved; and forming a photoresist film again over the silicone resin film. In this case, the substrate over which the photoresist film is reworked can have an organic film under the silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost.
Public/Granted literature
- US20070111134A1 Rework process for photoresist film Public/Granted day:2007-05-17
Information query