Invention Grant
US07642022B2 Parameter determination method, exposure method, device fabrication method, and storage medium
有权
参数确定方法，曝光方法，装置制造方法和存储介质
- Patent Title: Parameter determination method, exposure method, device fabrication method, and storage medium
- Patent Title (中): 参数确定方法，曝光方法，装置制造方法和存储介质
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Application No.: US12401343Application Date: 2009-03-10
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Publication No.: US07642022B2Publication Date: 2010-01-05
- Inventor: Hiroto Yoshii , Kouichirou Tsujita , Koji Mikami
- Applicant: Hiroto Yoshii , Kouichirou Tsujita , Koji Mikami
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc. I.P. Division
- Priority: JP2008-064823 20080313
- Main IPC: G03F9/00
- IPC: G03F9/00 ; G03C5/00
Abstract:
The present invention provides a parameter determination method of determining an optical parameter and a process parameter by using an optical simulator which calculates a resist image to be formed on a resist applied on a substrate, based on the optical parameter of an exposure apparatus which transfers a pattern of a mask onto the substrate, and a process simulator which calculates a process image to be formed on the substrate, based on the process parameter representing information concerning the resist and information concerning a process to be performed on the resist.
Public/Granted literature
- US20090233194A1 PARAMETER DETERMINATION METHOD, EXPOSURE METHOD, DEVICE FABRICATION METHOD, AND STORAGE MEDIUM Public/Granted day:2009-09-17
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